FTI represents Levitech in the USA for both sales and service. Levitech's high-tech expertise perfectly complements any company in the semiconductor assembly or wafer fabrication industry.
Levitator RTP
The Levitor 4300 and Levitor 4200 are leading-edge 300mm and 200mm tools for advanced RTP processes. In addition to enabling time-temperature profiles, and unmatched insensitivity to emissivity variations, these systems are designed to achieve unparalleled inherent uniformity and repeatability.
The Levitor RTP system is based on the unique concept of fast heating via conduction rather than the conventional method of radiation. Heat (energy) is stored in two massive blocks in close proximity to the wafer. When the blocks and wafer are separated by a very thin gas layer, the energy transfer from the blocks to wafer through this thin gas layer is very efficient, and extremely fast.
—Device—Pattern—Film—
Independent heating by heat conduction through gas:
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No pattern effect
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No need to remove back-side films
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Heats up SOI wafers and bulk Si wafers without warping and breakage
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Reproducible and reliable operation below 200°C
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High throughput, which can exceed 60 wfrs/hr per chamber
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Lowest cost for consumables and spares, no lamps, no rotation
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Lowest number of setup and test wafer
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Smallest footprint
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Most energy efficient (steady state <6 kW; peak<20 kW)
Levitrack ALD
The Levitrack™ ALD system is based on the novel concept of precursor separation in space, instead of by time, in combination with the unique floating wafer and conductive heating technology used in the Levitor RTP products.
Substrates are floating in a linear gas track, and are heated to the required process temperature (below 300°C) within a matter of seconds. At process temperature, the substrates float through a series of ALD deposition cells. Each cell consists of 2 precursors, which are separated in space by a Nitrogen purge (acting as inert gas curtains).
A sequence of precursor 1, Nitrogen purge, precursor 2, and again, Nitrogen purge will result in the deposition of 1 monolayer. The number of active ALD deposition cells depends on the required layer thickness.
The combination of a relatively large purge gas flow, and a narrow gap between the substrate and the gas divider block ensures a very effective separation of the precursors. Mixing of precursors will result in CVD growth of particles.
The unique design of ALD deposition cells technology even allows for single side ALD growth, as one side of the gas track can run with only Nitrogen. Because each ALD deposition cell is optimized for a fast linear motion of the substrates, high throughput is guaranteed.
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High throughput, due to precursor separation in space
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No deposition of films on the wall of the track
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No deposition on the back side of the wafer
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No vacuum pumps; (the entire track operates at 1 atmosphere)
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Low cost construction materials; with a deposition temperature < 300°C
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Because of the narrow gap, heating of the wafer is fast
Rapid Thermal Processing
